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Product Detailed Parameters
- Description：TRANS SS VHF NPN 25V SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT),Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MMBTH10LT1G is an NPN silicon VHF/UHF transistor manufactured by onsemi, housed in a surface-mount SOT-23 package. It features a collector-emitter voltage (VCEO) of 25 Vdc and a collector-base voltage (VCBO) of 30 Vdc. The device supports a maximum DC collector current of 4.0 mAdc under standard test conditions, with a minimum DC current gain (hFE) of 60 at this bias point. Thermal dissipation is rated at 225 mW on an FR-5 board at 25°C ambient temperature. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed for VHF and UHF frequency applications
- AEC-Q101 qualified for automotive environments
- Lead-free and halogen-free construction
Applications
- VHF amplifier circuits
- UHF amplifier circuits
- RF switching applications
Procurement Notes
Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a lead-free package compliant with RoHS standards. Confirm whether the required variant is the standard MMBTH10LT1G or the automotive-grade NSV prefix version, as these may have distinct supply chain requirements despite sharing identical electrical specifications.
Selection Notes
Select this component for high-frequency designs requiring low input capacitance and high transition frequency. Ensure the operating current remains near the 4.0 mAdc test condition to maintain expected hFE performance. Verify that the thermal resistance of 556 °C/W on FR-5 substrates fits the system's heat dissipation constraints.
Part Context
This part belongs to the MMBTH10L family of VHF/UHF transistors. It shares the same pinout and general form factor as other small-signal RF devices but is optimized for higher frequency operation compared to standard audio-frequency transistors. The datasheet also lists variants such as MMBTH10-4L and SMMBTH10-4L.
Replacement Considerations
Direct substitutes include the MMBTH10-4LT1G and SMMBTH10-4LT3G from the same manufacturer. These parts share the SOT-23 package and similar electrical characteristics, though specific gain and frequency parameters should be cross-referenced against the target application requirements.
