MMBTH10LT1G

Overview

The MMBTH10LT1G is a single NPN bipolar junction transistor manufactured by onsemi, designed for surface-mount applications in the SOT-23-3 package. It operates with a maximum collector-emitter voltage (VCEO) of 25 V and a collector-base voltage (VCBO) of 30 V. The device supports a maximum emitter-base voltage (VEBO) of 3 V and dissipates up to 225 mW of power. Key electrical characteristics include a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 650 MHz. It functions within a temperature range of -55°C to +150°C.

Feature Summary

• High-frequency performance suitable for VHF applications
• Compact SOT-23-3 surface-mount packaging
• Silicon construction for reliable operation

Applications

• VHF amplifier circuits
• General-purpose switching applications
• RF signal processing stages

Procurement Notes

Verify the specific ordering suffix LT1G against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in the manufacturer's datasheet. Cross-reference the component marking code with the official identification guide to prevent counterfeit substitution during assembly.

Selection Notes

Select this component when a low-voltage NPN transistor with high-speed switching capabilities is required. The 650 MHz transition frequency makes it appropriate for VHF band operations. Compare the 225 mW power dissipation limit against thermal management constraints in the target design to ensure safe operating area compliance under continuous load conditions.

Part Context

This part belongs to the MMBTH10L series of small-signal NPN transistors from onsemi. It shares the same core electrical architecture as variants like MMBTH10M3T5G but utilizes the SOT-23-3 outline instead of SOT-723. The series is engineered for compact consumer electronics and communication devices requiring efficient space utilization.

Replacement Considerations

MMBTH10M3T5G