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Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The MMBTH10LT3G is a single NPN bipolar junction transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It utilizes silicon technology and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a collector-emitter voltage (VCEO) of 25 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 3 V. The device supports a maximum power dissipation of 225 mW and features a gain-bandwidth product (fT) of 650 MHz. DC current gain (hFE) has a minimum value of 60, with a collector-emitter saturation voltage of 500 mV.
Feature Summary
- High-frequency performance characterized by a 650 MHz gain-bandwidth product suitable for VHF applications.
- Compact SOT-23-3 surface-mount design optimized for space-constrained printed circuit board layouts.
- Wide thermal operating range extending up to +150°C for robust environmental stability.
Applications
- VHF amplifier circuits
- General-purpose switching applications
- Low-power signal processing stages
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging configuration. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the component marking code with the manufacturer's case outline drawings to validate authenticity upon receipt.
Selection Notes
Select this component when a low-voltage NPN transistor with moderate current handling and high-speed switching capabilities is required. Ensure the application voltage remains below the 25 V collector-emitter limit. Consider the 225 mW power dissipation constraint during thermal design analysis for enclosed environments.
Part Context
This part belongs to the MMBTH10L series of small-signal transistors from onsemi. It shares the SOT-23-3 form factor with other devices in the family but is distinguished by its specific 25 V rating and 650 MHz frequency response characteristics defined in the official technical data.
Replacement Considerations
Consult official substitution guides for electrically equivalent parts. Verify pinout compatibility and voltage ratings before replacing. No direct substitute part numbers are confirmed in the provided public documentation.
