MMBTH11

MMBTH11

$0.25
  • Description:RF TRANS NPN 25V 650MHZ SOT-23-3
  • Series:-

SKU:82bf3d0053a4 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 25V 650MHZ SOT-23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):25V
  • Frequency - Transition:650MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 4mA, 10V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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MMBTH11

Overview

The onsemi MMBTH11 is a single NPN bipolar junction transistor designed for surface-mount applications. It utilizes the SOT-23 package to provide a compact footprint suitable for high-density circuit designs. The device supports a maximum DC collector current of 50 mA and offers a collector-emitter voltage rating of 25 V. With a maximum operating frequency of 650 MHz, it is engineered for efficient signal processing in radio frequency and switching circuits. The component operates reliably within a temperature range up to +150 °C and features a power dissipation capacity of 225 mW.

Feature Summary

  • High-frequency operation capability with a maximum cutoff frequency of 650 MHz
  • Compact SOT-23 surface-mount package design for space-constrained layouts
  • Robust thermal performance supporting a maximum junction temperature of +150 °C

Applications

  • Radio frequency signal amplification stages
  • General-purpose switching circuits
  • Low-power analog signal processing

Procurement Notes

Verify the specific manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the SOT-23 package dimensions match the target PCB layout requirements. Check for RoHS compliance status if environmental regulations apply to the final assembly. Ensure storage conditions maintain component integrity prior to soldering.

Selection Notes

Select this component when a small form factor NPN transistor is required for frequencies up to 650 MHz. Verify that the 50 mA collector current limit meets the load requirements. Consider the 25 V breakdown voltage for appropriate biasing margins. Evaluate the 225 mW power dissipation against thermal management capabilities in the final enclosure.

Part Context

The MMBTH11 belongs to the broad category of discrete semiconductor devices manufactured by onsemi. It serves as a fundamental building block for electronic systems requiring reliable switching or amplification. The SOT-23 packaging standardizes its integration into modern printed circuit boards alongside other surface-mount components.

Replacement Considerations

Consult official cross-reference lists from onsemi for verified equivalent parts. Ensure any substitute maintains identical pinout configuration and electrical ratings. Validate thermal characteristics and package compatibility before implementation.

MMBTH11MMBTH11
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