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The MMBTH24 is an NPN general-purpose amplifier transistor available in SOT-23 and TO-92 packages. It features a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 40 V. The device supports a continuous collector current (IC) of 50 mA with a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) minimum of 30 at IC=8.0mA, and a current gain bandwidth product (fT) of 400 MHz at IC=8.0mA, VCE=10V. Thermal resistance from junction to ambient is 556 °C/W for the SOT-23 package.
Verify the specific ordering suffix against the official ON Semiconductor website to ensure correct package type and availability. Note that historical Fairchild part numbers containing underscores may have been updated to dashes in current systems. Confirm final specifications directly with manufacturer documentation prior to procurement, as products are subject to change without notice.
Select this component for designs requiring NPN amplification with a 30V collector-emitter rating and 50mA continuous current capability. Ensure the application operates within the specified thermal limits, considering the 556 °C/W junction-to-ambient thermal resistance for the SOT-23 variant. Validate the 400 MHz bandwidth requirement against the test conditions of IC=8.0mA and VCE=10V.
The MMBTH24 is part of the MPSH24/MMBTH24 series originally developed by Fairchild Semiconductor, now integrated into ON Semiconductor's portfolio. It serves as a general-purpose NPN transistor optimized for RF and audio frequency amplification tasks. The datasheet references the MPSH11 for comparative characteristics, indicating its position within a family of similar small-signal devices.
Consult the official datasheet for the MPSH11 as a referenced alternative for characteristic comparison. Verify pinout compatibility between SOT-23 and TO-92 packages if substituting physical form factors. No direct cross-reference part numbers are explicitly listed in the provided source material.