MMBTH81_F080

Overview

The MMBTH81_F080 is a PNP silicon RF bipolar junction transistor from the onsemi MMBTH81 series, housed in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage (Vceo) of 20 V and an emitter-base voltage (Vebo) of 3 V. The device supports a continuous collector current of 50 mA and operates at frequencies up to 600 MHz. Key electrical parameters include a minimum DC current gain (hFE) of 60 and a power dissipation of 225 mW. Thermal resistance junction-to-ambient is 556 °C/W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Designed for radio frequency applications with operation up to 600 MHz
• Utilizes silicon technology for robust performance in single-configuration setups
• Supports high junction temperatures up to 150 °C for thermal resilience

Applications

• Radio frequency signal processing circuits
• RF amplifier stages requiring PNP topology
• High-frequency switching applications within specified voltage limits

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the specific suffix matches the required datasheet version, as variations may exist. Ensure storage conditions comply with moisture sensitivity levels if applicable. Cross-reference part numbers carefully to avoid confusion with similar RF transistors in the same series. Request original packaging documentation to guarantee traceability and quality assurance during procurement.

Selection Notes

Select this component when a PNP RF transistor with 20 V breakdown and 600 MHz capability is required. Consider the SOT-23 package constraints for PCB space and thermal management. Evaluate the 50 mA current limit against circuit demands. Compare hFE specifications with design requirements for gain stability. Assess thermal resistance values for adequate heat dissipation in the target application environment without exceeding maximum junction temperatures.

Part Context

The MMBTH81 belongs to the broader MMBTH81 series of RF bipolar transistors manufactured by onsemi. This series focuses on small-signal RF performance in compact surface-mount packages. The component represents a specialized solution for high-frequency analog and RF designs, distinct from general-purpose switching transistors. It is categorized under RF transistors rather than standard logic or power devices.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data.