MMBV109LT1G

MMBV109LT1G

$0.37
  • Description:DIODE TUNING SS 30V SOT23
  • Series:-

SKU:5ed262a3dfe6 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE TUNING SS 30V SOT23
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:32pF @ 3V, 1MHz
  • Capacitance Ratio:6.5
  • Capacitance Ratio Condition:C3/C25
  • Voltage - Peak Reverse (Max):30 V
  • Diode Type:Single
  • Q @ Vr, F:200 @ 3V, 50MHz
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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MMBV109LT1G

Overview

The MMBV109LT1G is a silicon varactor diode designed for general frequency control and tuning applications. It provides solid-state reliability as a replacement for mechanical tuning methods. The device features high Q with guaranteed minimum values at VHF frequencies and a controlled, uniform tuning ratio. Electrical characteristics include a reverse breakdown voltage of 30 Vdc and a diode capacitance range of 26 to 32 pF at 3.0 Vdc and 1.0 MHz. The figure of merit (Q) is guaranteed to be a minimum of 200 at 50 MHz. The capacitance ratio (C3/C25) ranges from 5.0 to 6.5. The component is available in surface mount SOT-23 packages.

Feature Summary

  • High Q factor with guaranteed minimum values at VHF frequencies
  • Controlled and uniform tuning ratio for consistent performance
  • Solid-state reliability replacing mechanical tuning methods

Applications

  • General frequency control circuits
  • Electronic tuning applications
  • VHF circuit design

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'G' suffix indicates a lead-free package compliant with environmental standards. Confirm that the requested part number matches the exact package style required for the assembly process. Cross-reference the manufacturer's latest documentation to ensure the component remains active and specifications have not changed.

Selection Notes

Select this component for designs requiring stable capacitance variation over a wide voltage range. Ensure the operating reverse voltage does not exceed the 30 Vdc maximum rating. Verify that the required Q factor at the target operating frequency meets the minimum specification of 200 at 50 MHz. Consider the thermal derating requirements if ambient temperatures exceed 25°C.

Part Context

This component belongs to the Silicon Epicap Diodes series from onsemi. It is categorized under voltage variable capacitance diodes. The datasheet identifies it as a preferred device, indicating it is recommended for future use and offers overall value. It serves as a direct functional alternative to through-hole variants like the MV209 in surface mount layouts.

Replacement Considerations

The MV209 is a documented equivalent in a TO-92 package. When substituting, verify pinout compatibility between SOT-23 and TO-92 styles. Ensure the replacement maintains the same capacitance tolerance and Q factor requirements for the specific circuit application.

FAQ

What is the guaranteed minimum Figure of Merit (Q) for this diode?

The minimum Q is 200, measured at a reverse voltage of 3.0 Vdc and a frequency of 50 MHz.

How is the capacitance ratio defined for this component?

The capacitance ratio is defined as Ct measured at 3 Vdc divided by Ct measured at 25 Vdc, with a typical value of 5.0.

What is the maximum forward power dissipation for the SOT-23 package?

The maximum forward power dissipation is 200 mW at an ambient temperature of 25°C, with a derating factor of 2.0 mW/°C above that temperature.

MMBV109LT1GMMBV109LT1G
$0.37
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