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The MMBV109LT1G is a silicon varactor diode designed for general frequency control and tuning applications. It provides solid-state reliability as a replacement for mechanical tuning methods. The device features high Q with guaranteed minimum values at VHF frequencies and a controlled, uniform tuning ratio. Electrical characteristics include a reverse breakdown voltage of 30 Vdc and a diode capacitance range of 26 to 32 pF at 3.0 Vdc and 1.0 MHz. The figure of merit (Q) is guaranteed to be a minimum of 200 at 50 MHz. The capacitance ratio (C3/C25) ranges from 5.0 to 6.5. The component is available in surface mount SOT-23 packages.
Verify the specific ordering suffix when sourcing components. The 'G' suffix indicates a lead-free package compliant with environmental standards. Confirm that the requested part number matches the exact package style required for the assembly process. Cross-reference the manufacturer's latest documentation to ensure the component remains active and specifications have not changed.
Select this component for designs requiring stable capacitance variation over a wide voltage range. Ensure the operating reverse voltage does not exceed the 30 Vdc maximum rating. Verify that the required Q factor at the target operating frequency meets the minimum specification of 200 at 50 MHz. Consider the thermal derating requirements if ambient temperatures exceed 25°C.
This component belongs to the Silicon Epicap Diodes series from onsemi. It is categorized under voltage variable capacitance diodes. The datasheet identifies it as a preferred device, indicating it is recommended for future use and offers overall value. It serves as a direct functional alternative to through-hole variants like the MV209 in surface mount layouts.
The MV209 is a documented equivalent in a TO-92 package. When substituting, verify pinout compatibility between SOT-23 and TO-92 styles. Ensure the replacement maintains the same capacitance tolerance and Q factor requirements for the specific circuit application.
The minimum Q is 200, measured at a reverse voltage of 3.0 Vdc and a frequency of 50 MHz.
The capacitance ratio is defined as Ct measured at 3 Vdc divided by Ct measured at 25 Vdc, with a typical value of 5.0.
The maximum forward power dissipation is 200 mW at an ambient temperature of 25°C, with a derating factor of 2.0 mW/°C above that temperature.