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The MMBV2105LT1G is a silicon tuning diode from the MMBV21xx series, designed for high-volume FM radio and TV tuning applications. It provides solid-state reliability as a replacement for mechanical tuning methods. The device features a standard capacitance tolerance of 10% and controlled tuning ratios. Key electrical characteristics include a reverse voltage rating of 30 Vdc, forward current of 200 mAdc, and maximum power dissipation of 225 mW at 25°C. Diode capacitance ranges from 13.5 pF to 16.5 pF with a typical value of 15 pF at 4.0 Vdc. The figure of merit is typically 400 at 50 MHz, and the tuning ratio (C2/C30) ranges from 2.5 to 3.2.
Verify component authenticity through authorized onsemi distributors or official channels. Confirm datasheet revision status and ordering suffixes match specific requirements. Ensure storage conditions adhere to specified temperature ranges to maintain device integrity prior to assembly.
Select based on required capacitance range and tuning ratio specifications. Verify package compatibility with surface mount processes. Consider thermal derating above 25°C when determining power dissipation limits in final application designs.
Part of the MMBV21xx series including variants like MMBV2101LT1 and MMBV2109LT1. Available in SOT-23 packages with bulk or tape and reel options. Designed for general frequency control replacing mechanical tuning methods.
MMBV2105L serves as the bulk packaging equivalent. MV2105 offers a TO-92 through-hole alternative. Verify pinout compatibility and electrical parameter matching before substitution.