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The MMBV809LT1 is a silicon tuning diode manufactured by onsemi, designed for variable capacitance applications. It features a maximum reverse working voltage (Vrwm) of 3.6 V and a low junction capacitance of 4.5 pF. The device supports an operating temperature range from -55°C to +125°C, ensuring reliability in demanding environments. Key electrical parameters include a maximum reverse leakage current of 1 µA at Vrwm and a forward voltage drop of 1.25 V at 10 mA. The component is housed in the SOT-23 surface-mount package, facilitating compact circuit integration.
Verify the specific ordering suffix against the official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's material composition declaration before finalizing procurement orders. Cross-reference the part number with authorized distributor catalogs to validate authenticity and traceability.
Select this component when a low-capacitance varactor is required for RF frequency adjustment. Ensure the operating voltage does not exceed the 3.6 V reverse working limit. Consider the thermal characteristics if the device will operate near the upper temperature boundary of its specified range.
This component belongs to the category of discrete semiconductor devices, specifically variable capacitance diodes or varactors. It serves as a passive element within active electronic circuits, providing tunable reactance without mechanical moving parts.
Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer for direct replacements or equivalent series components.