MMBV809LT3G

Overview

The MMBV809LT3G is a silicon tuning diode designed for 900 MHz frequency control and tuning applications. It provides solid-state reliability as a replacement for mechanical tuning methods. The device operates within a reverse voltage of 20 Vdc and forward current of 20 mAdc, with total power dissipation rated at 225 mW at 25°C. It features a controlled and uniform tuning ratio, available in an SOT-23 surface mount package.

Feature Summary

• Designed for 900 MHz frequency control and tuning applications
• Provides solid-state reliability replacing mechanical tuning methods
• Features controlled and uniform tuning ratio

Applications

• Frequency control circuits
• Tuning applications
• RF circuit design

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity and lead time requirements. Ensure the component meets RoHS compliance standards if required by your manufacturing process. Confirm that the SOT-23 package style matches your PCB footprint specifications before finalizing procurement orders.

Selection Notes

Select this component when a reliable solid-state alternative to mechanical tuning is needed for 900 MHz operations. Consider its 225 mW power dissipation limit and 20 Vdc reverse voltage rating against your circuit's maximum operating conditions. Verify that the capacitance ratio and figure of merit align with your specific tuning linearity requirements.

Part Context

This part belongs to onsemi's silicon tuning diode series, specifically engineered for RF applications. It replaces older mechanical tuning components with a compact surface-mount solution. The device is manufactured in an SOT-23 package, offering space efficiency for modern electronic designs requiring precise frequency control.

Replacement Considerations

No public confirmed substitute part numbers are documented.