MMDB30-B11

RF Diode Overview

The MMDB30-B11 is a beam lead PIN diode manufactured by MACOM Technology Solutions. It is constructed from silicon and features a single configuration with a minimum breakdown voltage of 100 V. The device exhibits a typical junction capacitance of 0.02 pF and a maximum forward resistance of 6.5 Ω at a test current of 10 mA. Designed for microwave applications, it operates up to a maximum temperature of 175 °C and utilizes a rectangular ceramic metal-sealed cofired package.

RF Diode Feature Summary

• Fast switching performance suitable for broadband high-speed multi-throw switches
• Rugged construction with oxide/polyimide double passivation
• Low microwave capacitance optimized for phase shifters, modulators, and attenuators

RF Diode Applications

• Broadband high speed multi-throw switches
• Phase shifters
• Modulators
• Attenuators

RF Diode Procurement Notes

Verify the manufacturer designation as Cobham PLC or Metelics on official datasheets, as MACOM's portfolio references this component family. Confirm RoHS compliance status and specific packaging details directly with authorized distributors before ordering.

RF Diode Selection Notes

Select this component for applications requiring low capacitance and fast switching in microwave circuits. Ensure the operating environment supports the 175 °C maximum junction temperature and that the 100 V breakdown voltage meets circuit requirements.

RF Diode Part Context

This part belongs to the Mesa Beam Lead PIN diode series, which provides low microwave capacitance and fast switching performance. These diodes are engineered for rugged construction and are ideal for use in demanding RF and microwave signal conditioning environments.

RF Diode Replacement Considerations

Consult official substitution lists for equivalent beam lead PIN diodes with matching capacitance and breakdown voltage specifications.