MMDF1N05ER2

FET, MOSFET Arrays Overview

The MMDF1N05ER2 is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It is housed in an SOIC-8 surface-mount package and utilizes silicon technology. The device features a drain-source breakdown voltage (Vds) of 55 V and a continuous drain current (Id) of 3.7 A. Its maximum gate-source voltage (Vgs) is rated at ±20 V, with a typical on-resistance (Rds(on)) of 45 mΩ. The component supports a power dissipation of 2 W and operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual channel configuration for compact circuit design
• Enhancement mode operation for standard logic control
• Low on-resistance for efficient power handling

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Load switching applications
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ER2 against the manufacturer's official datasheet to confirm tape-and-reel packaging quantities. Confirm RoHS compliance status directly from the latest product specification document before procurement planning.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required in an SOIC-8 package. Ensure the application voltage does not exceed 55 V and that the thermal design accommodates the 2 W power dissipation limit in the specified package.

FET, MOSFET Arrays Part Context

This part belongs to the MMDF1N05E series of dual N-channel MOSFETs. The series is designed for general-purpose power switching applications requiring low on-resistance and small footprint integration in modern electronic systems.

FET, MOSFET Arrays Replacement Considerations

Consult the official onsemi cross-reference documentation for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions.