MMDF2C03HDR2G

FET, MOSFET Arrays Overview

The MMDF2C03HDR2G is a complementary dual N- and P-channel MOSFET from onsemi's MiniMOS series, housed in an SO-8 surface-mount package. It integrates two separate elements with built-in diodes. The N-channel device offers a drain-source breakdown voltage of 30 V and a continuous drain current of 2 A, with a maximum on-resistance of 15 mΩ. The P-channel counterpart provides a 30 V breakdown and 4 A current capability, featuring a 9 mΩ on-resistance. Both channels are logic-level compatible and rated for avalanche energy to support high-speed switching applications.

FET, MOSFET Arrays Feature Summary

• Miniature SO-8 surface mount package design that reduces board space requirements
• Logic level gate drive compatibility allowing direct interfacing with standard logic ICs
• Avalanche energy rating specified to provide safety margins against unexpected voltage transients in inductive load switching

FET, MOSFET Arrays Applications

• DC-DC converters
• Power management in portable and battery-powered products such as computers and cellular phones
• Low voltage motor controls in mass storage products like disk drives

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to confirm the reel quantity and tape specifications required for your assembly line. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure the component matches the exact CASE 751-07 package dimensions for PCB footprint compatibility.

FET, MOSFET Arrays Selection Notes

Select this complementary pair when designing low-voltage synchronous rectification stages requiring matched N- and P-channel characteristics. The logic-level interface simplifies driver circuit design by eliminating the need for complex gate drive voltage translation. Evaluate the thermal performance within the SO-8 package constraints for the intended power dissipation levels.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's MiniMOS family, which utilizes High Cell Density HDTMOS process technology. This series is engineered for ultra-low on-resistance and true logic level performance. The complementary nature of the N- and P-channel devices allows for efficient half-bridge configurations in compact form factors.

FET, MOSFET Arrays Replacement Considerations

Direct replacements include other MiniMOS complementary pairs such as MMDF2C03HD or MMDF2C03HDR2. Verify pinout compatibility and electrical parameters including Rds(on) and breakdown voltages when substituting with components from different manufacturers.