MMDF2P02HDR2G

FET, MOSFET Arrays Overview

The MMDF2P02HDR2G is a dual P-Channel Power MOSFET manufactured by onsemi, housed in an SOIC-8 (SOP-8) surface-mount package. It features a drain-source breakdown voltage of 25 V and a continuous drain current rating of 2 A. The device exhibits a maximum on-resistance of 250 mΩ at specified gate-source voltages. Operating characteristics include a gate-source voltage range of ±20 V and power dissipation capability of 2 W. The component supports an extended temperature range from -55°C to +150°C junction temperature, utilizing enhancement mode operation for efficient switching applications.

FET, MOSFET Arrays Feature Summary

• Dual independent P-Channel configuration within a single compact package
• Logic-level compatible gate drive requirements for direct interface with control circuits
• Enhanced thermal performance through robust leadframe design and low on-resistance

FET, MOSFET Arrays Applications

• Low-side and high-side load switching in automotive electronics
• Power management circuits in portable consumer devices
• DC-DC converter synchronous rectification stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'HDR2G' against official onsemi documentation to confirm tape-and-reel packaging and RoHS compliance status. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications. Confirm availability status as distribution channels may list obsolete or end-of-life inventory for this specific part number variant.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-Channel MOSFET solution is required for space-constrained designs. Ensure the 25 V voltage rating exceeds the maximum circuit operating voltage with adequate margin. Verify that the 2 A current capacity meets the peak load requirements of the application. Consider the SOIC-8 thermal resistance if high duty cycle operation is anticipated.

FET, MOSFET Arrays Part Context

This part belongs to the MMDF series of dual MOSFETs from onsemi, designed for general-purpose switching applications. It complements N-Channel variants like the NTMD6N02R2G in complementary bridge configurations. The series emphasizes cost-effective integration of two transistors into a single footprint, reducing board space compared to discrete solutions.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible substitutes may include other dual P-Channel MOSFETs in SOIC-8 packages with similar voltage and current ratings. Verify electrical parameters such as Rds(on) and threshold voltage before substitution. Check manufacturer-specific thermal and mechanical constraints to ensure compatibility with existing PCB layouts.