MMDT2907A-7

$0.38

Description：TRANS 2PNP 60V 600MA SOT-363
Series：-

SKU:5381812e407e Category: Bipolar Transistor Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP 60V 600MA SOT-363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：600mA
Voltage - Collector Emitter Breakdown (Max)：60V
Vce Saturation (Max) @ Ib, Ic：1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)：10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
Power - Max：200mW
Frequency - Transition：200MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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MMDT2907A-7

Overview

The MMDT2907A-7 is a dual PNP small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes an epitaxial planar die construction within an ultra-small SOT-363 package. The device supports a maximum collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of -60 V, with an emitter-base voltage (VEBO) rating of -5.0 V. Continuous collector current (IC) reaches -600 mA, while power dissipation (Pd) is rated at 200 mW. The junction-to-ambient thermal resistance (RθJA) is 625 °C/W. Operating temperature ranges from -55 to +150 °C. DC current gain (hFE) varies between 50 and 300 depending on collector current conditions. The transition frequency (fT) is 200 MHz.

Feature Summary

Dual PNP configuration in an ultra-small SOT-363 surface mount package
Epitaxial planar die construction for low power amplification and switching
Qualified to AEC-Q101 standards for high reliability applications

Applications

Low power amplification circuits
General purpose switching applications
Automotive electronics requiring high reliability components

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format as documented in the official datasheet. Confirm that the component marking 'K2F' matches the expected product identification code for this part number before procurement.

Selection Notes

Select this component when a dual PNP transistor is required in an SOT-363 footprint. Ensure the application voltage does not exceed the -60 V ratings for VCEO and VCBO. Verify that the required continuous collector current remains within the -600 mA limit and that thermal management accommodates the 200 mW power dissipation capability.

Part Context

This component belongs to the MMDT2907 series of dual PNP transistors produced by Diodes Incorporated. It shares the same electrical characteristics and pinout as the standard MMDT2907A but is specifically packaged in a 3000-unit tape and reel format designated by the '-7' suffix.