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The MMDT2907VQ-7 is a dual PNP small signal bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It operates with a collector current of -600 mA and withstands collector-emitter and collector-base voltages up to -60 V. The device features a maximum power dissipation of 150 mW and a transition frequency of 200 MHz. It is housed in an ultra-small SOT-563 surface mount package, suitable for space-constrained designs. The component is qualified to AEC-Q101 standards and capable of PPAP submission.
Verify the ordering suffix matches the required reel size and tape width specifications. Confirm that the procurement channel is authorized to ensure product authenticity and traceability. Check the date code marking against the manufacturer's key to determine production year and month. Ensure compliance with environmental directives such as RoHS 3 and REACH if applicable to the target market.
Select this component when automotive qualification and PPAP capability are mandatory for the supply chain. The SOT-563 package is appropriate for high-density PCB layouts where space is limited compared to standard SOT-23 or SOT-26 packages. Verify that the 150 mW power dissipation rating meets the thermal requirements of the specific application environment.
This part belongs to the MMDT2907 series of dual PNP transistors from Diodes Incorporated. The 'V' designation indicates the specific SOT-563 package variant, while the 'Q' suffix denotes its automotive grade status. It serves as a specialized version of the standard MMDT2907A designed specifically for rigorous automotive manufacturing and quality standards.
MMDT2907AQ-7-F: Dual PNP BJT in SOT-363 package, also AEC-Q101 qualified.