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The MMDT3904-7-F is a dual NPN small signal transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an SOT-363 surface mount package. The device features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and a continuous collector current (IC) of 200 mA. Power dissipation is rated at 200 mW with a thermal resistance of 625 °C/W. The DC current gain (hFE) ranges from 40 to 300 depending on the collector current. The transition frequency (fT) is 300 MHz. Operating and storage temperatures span from -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm that the marking code matches K6N for the MMDT3904-7-F variant. Ensure packaging specifications align with the 3,000 units per reel requirement. Check for compliance with EU Directive 2002/95/EC and 2011/65/EU regarding restricted substances.
Select this component when a dual NPN configuration is required in a compact footprint. The SOT-363 package offers space savings compared to single transistors. Consider the 200 mA current limit and 40 V voltage rating for circuit design constraints. Verify thermal management requirements given the 200 mW power dissipation limit in still air conditions.
This part belongs to the MMDT3904 series of dual NPN transistors. It shares electrical characteristics with single NPN variants like the MMBT3904 but integrates two devices in one package. The product status is listed as Active. The datasheet document number is DS30088 Rev. 18-2.
Direct pin-compatible replacements include other dual NPN transistors in SOT-363 packages such as the DMMT3904WQ-7-F or MMDT3904V-7. Verify that replacement parts meet the same AEC-Q101 qualification if automotive reliability is required.
The maximum collector-emitter breakdown voltage (BVCEO) is 40 V.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
The typical input capacitance (Cibo) is 8.0 pF at VEB = 0.5V and f = 1.0MHz.