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The MMDT3904-7 is a dual NPN small-signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an ultra-small SOT-363 package. The device features a collector-base voltage of 60 V, a collector-emitter voltage of 40 V, and a continuous collector current rating of 200 mA. Maximum power dissipation is 200 mW with a thermal resistance of 625 °C/W. The component operates within a temperature range of -55 to +150 °C and includes a current gain-bandwidth product of 300 MHz.
Verify the specific ordering suffix against official documentation to confirm packaging details and terminal finishes. The standard part number indicates tape and reel shipping quantities. Confirm compliance requirements such as UL flammability ratings and moisture sensitivity levels prior to procurement to ensure alignment with manufacturing specifications.
Select this component for designs requiring compact dual NPN transistors with moderate voltage ratings. Ensure the application stays within the 200 mA continuous collector current limit and 200 mW power dissipation constraints. Verify that the operating ambient temperature remains within the specified -55 to +150 °C range for reliable performance.
This component belongs to the MMDT series of dual bipolar junction transistors from Diodes Incorporated. It serves as a surface-mount alternative to through-hole discrete transistors, offering space savings while maintaining comparable electrical characteristics for general-purpose electronic circuitry.
The datasheet notes a lead-free version designated by the suffix '-F' (MMDT3904-7-F). Verify if other manufacturers offer pin-compatible SOT-363 dual NPN transistors with matching voltage and current ratings for direct substitution.