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Product Detailed Parameters
- Description：TRANS 2PNP 40V 200MA SOT-363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
- Power - Max：200mW
- Frequency - Transition：250MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The MMDT3906-7 is a dual PNP small-signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an SOT-363 molded plastic package. The device features a collector-base voltage (VCBO) of -40 V, a collector-emitter voltage (VCEO) of -40 V, and an emitter-base voltage (VEBO) of -5.0 V. Continuous collector current (IC) is rated at -200 mA with a power dissipation (Pd) of 200 mW. The junction-to-ambient thermal resistance (RθJA) is 625 °C/W. Operating and storage temperature ranges span from -55 to +150 °C. DC current gain (hFE) varies between 30 and 300 depending on collector current conditions.
Feature Summary
- Dual PNP configuration within an ultra-small surface mount package
- Epitaxial planar die construction for low power amplification and switching
- UL flammability rating classification 94V-0 for the case material
Applications
- Low power amplification circuits
- General purpose switching applications
Procurement Notes
Verify the specific ordering suffix '-7' against official manufacturer documentation to confirm tape and reel packaging quantities. Ensure that any visual markings or date codes align with the provided marking information table. Cross-reference the datasheet revision number to guarantee compliance with the latest electrical characteristics and mechanical dimensions before finalizing procurement orders.
Selection Notes
Select this component when a matched pair of PNP transistors is required in a compact footprint. The SOT-363 package offers space efficiency compared to single discrete packages. Evaluate the 200 mW power dissipation limit and thermal resistance constraints for the intended ambient temperature environment. Confirm that the -40 V voltage ratings meet the circuit requirements.
Part Context
This part belongs to the MMDT3906 series of dual PNP small signal transistors produced by Diodes Incorporated. It shares the same core electrical specifications as other variants in the family but differs in packaging format. The standard version is available in bulk tape and reel configurations suitable for automated surface mount assembly processes.
Replacement Considerations
MMDT3906VC-7
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is -40 V.
What is the typical current gain-bandwidth product?
The current gain-bandwidth product (fT) is typically 250 MHz under specified test conditions.
How is the device marked?
The product type marking code is K3N, followed by the date code marking.
