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The MMDT4124-7 is a dual NPN small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an ultra-small SOT-363 package. The device features a collector-base voltage of 30 V, a collector-emitter voltage of 25 V, and an emitter-base voltage of 5.0 V. Continuous collector current is rated at 200 mA with a maximum power dissipation of 200 mW. The junction-to-ambient thermal resistance is 625 K/W. Operating and storage temperature ranges span from -55°C to +150°C.
Verify the specific ordering suffix when sourcing components. The base part number requires a suffix to indicate packaging or material specifications. Confirm that the received units match the required lead-free plating standards if environmental compliance is mandatory for the assembly process.
Select this component for designs requiring two matched NPN transistors in a minimal footprint. Ensure the circuit operates within the 200 mA continuous collector current limit and respects the 200 mW total power dissipation constraint. Verify thermal management requirements based on the specified junction-to-ambient thermal resistance value.
This component belongs to the family of dual small signal transistors offered by Diodes Incorporated. It serves as a complementary counterpart to the PNP type MMDT4126. The SOT-363 form factor allows for high-density PCB layouts compared to discrete single-transistor solutions.
MMDT4126-7-F
The product type marking code is K1B.
The date code consists of two characters: the first indicates the year (e.g., Y=2002) and the second indicates the month (e.g., M=September).
The current gain-bandwidth product (fT) is typically 300 MHz under conditions of VCE = 20V, IC = 10mA, and f = 100MHz.