MMDT4126-7-F

MMDT4126-7-F

$0.05
  • Description:TRANS 2PNP 25V 200MA SOT-363
  • Series:-

SKU:d462e1424f27 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 25V 200MA SOT-363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):25V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 1V
  • Power - Max:200mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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MMDT4126-7-F

Overview

The MMDT4126-7-F is a dual PNP small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an ultra-small SOT-363 package. The device features a maximum collector-emitter voltage (VCEO) of -25 V and a continuous collector current (IC) rating of -200 mA. Power dissipation is rated at 200 mW with a thermal resistance (RθJA) of 625 K/W. The component operates within a temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 60 to 360, a transition frequency (fT) of 250 MHz, and a collector-base breakdown voltage (V(BR)CBO) of -25 V.

Feature Summary

  • Complementary NPN type available as MMDT4124
  • Designed for medium power amplification and switching applications
  • Ultra-small surface mount package configuration

Applications

  • Medium power amplification circuits
  • General purpose switching applications
  • Surface mount electronic assemblies

Procurement Notes

Verify the specific ordering suffix when sourcing components. The datasheet indicates that adding the "-F" suffix designates the lead-free version with matte tin finish plating. Confirm that the procurement order matches the required terminal finish and packaging specifications to ensure compliance with project material requirements.

Selection Notes

Select this component for designs requiring dual PNP transistors in a compact footprint. Ensure the circuit voltage does not exceed the -25 V limits for collector-base or collector-emitter configurations. Verify that the required current gain falls within the specified hFE ranges for the intended operating current levels. Consider the thermal resistance when calculating heat dissipation on the PCB layout.

Part Context

This part belongs to the MMDT4126 series of dual PNP small signal transistors produced by Diodes Incorporated. It shares the same physical package and general electrical architecture as other complementary pairs in the lineup, such as the MMDT4124 which provides the NPN equivalent configuration. The series is characterized by its suitability for space-constrained surface mount designs.

Replacement Considerations

The MMDT4124 serves as the complementary NPN counterpart within the same product family. Other dual PNP transistors in the SOT-363 package may be considered if electrical parameters align, though direct substitution requires verification of pinout compatibility and voltage ratings against the original design specifications.

MMDT4126-7-FMMDT4126-7-F
$0.05
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