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Product Detailed Parameters
- Description：TRANS 2PNP 150V 200MA SOT-363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：150V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：200mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The MMDT5401-7-F is a dual PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT363 surface-mount package. It features epitaxial planar die construction and operates within a collector-emitter voltage range of -150 V and a continuous collector current limit of -200 mA. The device supports a maximum power dissipation of 200 mW at standard ambient conditions and maintains junction temperatures from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) minimum of 50 at -10 mA, a transition frequency (fT) of 100 MHz, and a collector-base cutoff current of -50 nA.
Feature Summary
- Dual PNP configuration integrated into an ultra-small SOT363 surface-mount package for space-constrained designs.
- High-voltage capability with a -150 V collector-emitter breakdown rating suitable for medium power amplification and switching applications.
- Compliant with RoHS 3 standards and designated as a halogen-free and antimony-free "Green" device.
Applications
- Medium power amplification circuits
- General-purpose electronic switching applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and compliance status. Confirm that the component meets all applicable environmental directives required for the target deployment region before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual PNP solution is required for high-voltage signal processing. Ensure the design accommodates the thermal resistance limits specified for the SOT363 package under steady-state operating conditions.
Part Context
This part belongs to the MMDT5401 series of complementary dual transistors produced by Diodes Incorporated. It serves as the PNP counterpart to NPN variants within the same family, sharing identical physical dimensions and pinout configurations for balanced circuit design.
Replacement Considerations
MMDT5401Q-7-F
FAQ
What is the marking code for the MMDT5401-7-F?
The product type marking code for this component is K4M.
Is there a complementary NPN version available?
Yes, the complementary NPN type is available under the part number MMDT5551.
What is the maximum collector-base voltage rating?
The absolute maximum collector-base voltage (VCBO) rating is -160 V.
