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The MMDT5401-TP is a dual PNP bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It features an ultra-small surface-mount plastic package, specifically the SOT-363 (SC-88) configuration with six terminals. The device is designed for low-power amplification and switching applications. Key electrical specifications include a maximum collector current of 200 mA and a collector-emitter breakdown voltage of 150 V. The unit operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 200 mW. The construction utilizes epitaxial planar die technology.
Verify the specific ordering suffix when sourcing components. The standard designation includes the TP suffix indicating lead-free status. Confirm RoHS compliance requirements against the latest manufacturer documentation before finalizing procurement orders to ensure alignment with environmental regulations.
Select this component for designs requiring dual PNP transistors in a minimal footprint. Ensure the circuit voltage does not exceed the 150 V collector-emitter rating. Verify that the thermal management strategy accommodates the 200 mW power dissipation limit within the specified operating temperature range.
This part belongs to the MCC MMDT5401 series of small signal bipolar transistors. It is functionally similar to other dual PNP arrays in the SOT-363 package. The product line emphasizes compact packaging solutions for modern consumer electronics and industrial control systems requiring reliable switching performance.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other manufacturers offering SOT-363 dual PNP arrays only if electrical parameters match exactly.