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The MMDT5551HE3-TP is an AEC-Q101 qualified dual NPN small-signal Bipolar Junction Transistor (BJT) manufactured by Micro Commercial Components. It features a 600mA collector current, 180V collector-base voltage, and 160V collector-emitter voltage. The device offers 200mA collector power dissipation, 6V emitter-base voltage, 6pF maximum output capacitance, and 300MHz maximum transition frequency within a -55°C to +150°C operating junction temperature range. Packaged in SOT-363, it complies with RoHS standards and exhibits Moisture Sensitivity Level 1.
Verify the specific ordering suffix against official MCC documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before integration into regulated products.
Select this component when dual NPN transistors are required in a minimal footprint. The high collector-base voltage of 180V supports demanding switching environments. Verify that the 200mW power dissipation aligns with thermal management capabilities in the target design application.
This part belongs to the MMDT5551 series of dual NPN transistors from Micro Commercial Components. It shares functional similarities with other dual BJT families but is distinguished by its specific AEC-Q101 automotive qualification and SOT-363 packaging format designed for space-constrained PCB layouts.
Direct substitutes include MMDT5551 variants from other manufacturers offering identical pinouts and electrical characteristics. Verify package dimensions and thermal resistance values match the original design constraints before substitution.