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MMFTC6420 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is MOSFET N/P-CH 20V 3A SOT26. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MMFTC6420
- Description：MOSFET N/P-CH 20V 3A SOT26
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta), 2.2A (Ta)
- Rds On (Max) @ Id, Vgs：70mOhm @ 3A, 4.5V, 125mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.3nC @ 4.5V, 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：324pF @ 10V, 340pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MMFTC6420
FET, MOSFET Arrays Overview
The MMFTC6420 is an N+P Channel Enhancement Mode FET housed in a SOT-26 (TO-457) package. The N-channel MOSFET (Q1) supports a drain-source voltage of 20 V, a continuous DC current of 3.0 A, and a peak current of 12 A, with a maximum on-state resistance of 70 mΩ at 4.5 V gate drive. The P-channel MOSFET (Q2) provides a drain-source voltage of -20 V, a continuous DC current of -2.2 A, and a peak current of -6 A, with a maximum on-state resistance of 125 mΩ at 4.5 V gate drive. Both channels operate within a junction temperature range of -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Integrated N+P channel configuration for complementary switching applications
- Fast switching times suitable for high-frequency signal processing
- Logic level compatibility with low threshold voltages
FET, MOSFET Arrays Applications
- Signal processing circuits
- Battery management systems
- Driver stages
- Logic level converters
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. The -Q suffix indicates AEC-Q101 compliance, while the -AQ suffix denotes parts currently undergoing AEC-Q101 qualification. Confirm these details match your project's reliability requirements before finalizing orders.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring compact dual-channel switching in a small surface-mount footprint. Ensure the PCB copper pad area meets the 80 mm² recommendation to achieve the specified power dissipation ratings. Verify that the gate drive voltage aligns with the threshold specifications for optimal on-state resistance performance.
FET, MOSFET Arrays Part Context
This device belongs to Diotec Semiconductor's portfolio of discrete enhancement mode field-effect transistors. It utilizes a silicon substrate technology optimized for general-purpose switching tasks. The product line emphasizes space-saving packaging solutions like the SOT-26 outline to support modern miniaturized electronic designs.
FET, MOSFET Arrays Replacement Considerations
No official substitute part numbers are documented by the manufacturer. When evaluating alternatives, ensure the replacement matches the 20 V rating, SOT-26 package dimensions, and comparable RDS(on) values for both N-channel and P-channel configurations.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
