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MMFTN620KD is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is MOSFET 2N-CH 60V 0.35A SOT26. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MMFTN620KD
- Description：MOSFET 2N-CH 60V 0.35A SOT26
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：350mA
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：35pF @ 25V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MMFTN620KD
FET, MOSFET Arrays Overview
The MMFTN620KD is a dual N-channel enhancement mode MOSFET in an SOT-26 package. It features a drain-source voltage of 60 V, continuous drain current of 350 mA, and power dissipation of 500 mW. The on-state resistance is less than 1.5 Ω at VGS=10V/ID=500mA and 2.25 Ω at VGS=4.5V/ID=250mA. Gate threshold voltage ranges from 0.8 V to 1.5 V. Input capacitance is typically 35 pF, with total gate charge at 1.3 nC. Operating junction temperature spans -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual FET configuration within a single compact surface-mount package
- ESD protected gate structure for enhanced signal integrity
- Compliant with RoHS directives without exemptions
FET, MOSFET Arrays Applications
- Signal processing circuits
- Logic level conversion
- Driver stages
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix when ordering. The standard version is commercial grade. Versions with the -Q suffix are AEC-Q101 compliant, while the -AQ suffix indicates parts undergoing qualification. Confirm package type SOT-26 (SOT-457) and check datasheet revisions before finalizing component selection.
FET, MOSFET Arrays Selection Notes
Select this component for low-voltage switching applications requiring dual channels in minimal space. Ensure the required drain current does not exceed 350 mA DC. Verify that the logic levels match the specified gate threshold range. Consider thermal constraints as the maximum power dissipation is limited to 500 mW.
FET, MOSFET Arrays Part Context
This device belongs to Diotec Semiconductor's lineup of small-signal MOSFETs designed for general-purpose switching. It utilizes a planar technology optimized for low on-resistance and fast switching speeds. The SOT-26 package allows for high-density PCB layouts compared to discrete single-transistor solutions.
FET, MOSFET Arrays Replacement Considerations
No official substitutes are listed by the manufacturer. When evaluating alternatives, verify matching pinouts for the SOT-26 package. Ensure replacement devices meet or exceed the 60 V breakdown voltage and 350 mA current ratings.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
