MMFTN620KDW-AQ

FET, MOSFET Arrays Overview

The MMFTN620KDW-AQ is a dual N-channel enhancement mode MOSFET in an SOT-363 package. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 350 mA. The on-state resistance (RDS(on)) is less than 2 Ω at VGS = 2.5 V and ID = 50 mA, with a maximum gate-source voltage (VGSS) of ±20 V DC. Total power dissipation reaches 410 mW on a PCB with large copper pads. The device includes ESD protection on the gates, operates up to a junction temperature of 150°C, and meets AEC-Q101 automotive qualification standards.

FET, MOSFET Arrays Feature Summary

• Dual transistor configuration within a compact SOT-363 surface-mount package
• Integrated electrostatic discharge (ESD) protection on both gate terminals
• Low threshold voltage enabling efficient drive from low-voltage logic sources
• Fast switching characteristics suitable for high-frequency driver circuits

FET, MOSFET Arrays Applications

• Power management systems
• Motor control applications
• Driver circuit stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix -AQ confirms AEC-Q101 qualification status before procurement. Confirm the required tape and reel packaging quantity matches the standard factory specification. Ensure the design accommodates the thermal resistance limits based on the intended copper pad area on the printed circuit board.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. The low RDS(on) supports efficient operation at moderate currents. Verify that the 60 V breakdown voltage aligns with the system's maximum supply rails. Consider the total gate charge for driving requirements in high-speed switching environments.

FET, MOSFET Arrays Part Context

This part belongs to Diotec Semiconductor's MMFTN series of dual MOSFETs. The -AQ suffix specifically denotes compliance with the AEC-Q101 automotive reliability standard. It serves as a compact alternative to single transistors where space is constrained and dual-channel functionality is necessary.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented by the manufacturer. When evaluating alternatives, verify that the replacement offers equivalent VDSS, ID, and RDS(on) specifications. Ensure the new component fits the SOT-363 footprint and maintains similar switching speeds and thermal performance.