MMIX1G120N120A3V1

MMIX1G120N120A3V1

$40.86
  • Description:IGBT PT 1200V 220A 24-SMPD
  • Series:GenX3™

SKU:035517ad5d71 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 1200V 220A 24-SMPD
  • Series:GenX3™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):220 A
  • Current - Collector Pulsed (Icm):700 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 100A
  • Power - Max:400 W
  • Switching Energy:10mJ (on), 33mJ (off)
  • Input Type:Standard
  • Gate Charge:420 nC
  • Td (on/off) @ 25°C:40ns/490ns
  • Test Condition:960V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr):700 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:24-PowerSMD, 21 Leads
  • Supplier Device Package:24-SMPD
  • Grade:-
  • Qualification:-

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MMIX1G120N120A3V1

Overview

The MMIX1G120N120A3V1 is an ultra-low Vsat PT IGBT designed for 3kHz switching applications. It features a single configuration in a module package, utilizing silicon technology. The component supports a maximum collector-emitter voltage of 1200V and a continuous collector current of 120A at 25°C. It operates within a temperature range of -55°C to +150°C. The device is part of the IXYS GenX3 series, optimized for low conduction losses.

Feature Summary

  • Ultra-low saturation voltage design for enhanced efficiency
  • Plasma Textured (PT) technology for optimized switching performance
  • Optimized specifically for 3kHz switching frequency applications

Applications

  • Medium power industrial motor drives
  • High-efficiency power supply units
  • Inverter systems requiring low conduction loss

Procurement Notes

Verify the specific suffix A3V1 against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Ensure the ordering code matches the exact module variant required for your PCB layout. Cross-reference with official IXYS documentation to validate RoHS compliance status before finalizing procurement orders.

Selection Notes

Select this component when low conduction loss is critical for 3kHz operation. Compare Vsat values against standard IGBTs to estimate thermal management requirements. Verify that the 120A current rating aligns with the peak load demands of the target circuit design without exceeding junction temperature limits.

Part Context

This module belongs to the IXYS GenX3 family of IGBTs. It utilizes Plasma Textured technology to reduce forward voltage drop. The part is distinct from discrete TO-package devices, offering higher current density in a compact module form factor suitable for integrated power electronics designs.

Replacement Considerations

Check for direct substitutes within the IXYS MMIX1G120N120 series. Verify compatibility with existing gate drive circuits due to potential differences in input capacitance. Ensure thermal interface material specifications match the replacement module's base plate dimensions.

MMIX1G120N120A3V1MMIX1G120N120A3V1
$40.86
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