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Product Detailed Parameters
- Description：IGBT PT 600V 400A 24-SMPD
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：400 A
- Current - Collector Pulsed (Icm)：1000 A
- Vce(on) (Max) @ Vge, Ic：1.5V @ 15V, 100A
- Power - Max：1000 W
- Switching Energy：2.7mJ (on), 5mJ (off)
- Input Type：Standard
- Gate Charge：585 nC
- Td (on/off) @ 25°C：44ns/250ns
- Test Condition：480V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：66 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：24-PowerSMD, 21 Leads
- Supplier Device Package：24-SMPD
- Grade：-
- Qualification：-
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Overview
The MMIX1G320N60B3 is a single Power IGBT from IXYS, utilizing XPT technology for optimized performance in medium-frequency applications. It features a 600V collector-emitter voltage rating and a continuous collector current of 400A at 25°C. The device is housed in an SMPD-24 package with a maximum power dissipation of 1kW. Key electrical parameters include a saturation voltage of 1.7V, gate-emitter leakage current of 400nA, and operating temperatures ranging from -55°C to +150°C.
Feature Summary
- XPT technology ensures low saturation voltage and fast switching characteristics suitable for 5-40 kHz frequencies.
- Single configuration designed for high-current power conversion modules.
- Robust thermal management capabilities within the SMPD-24 surface-mount package.
Applications
- Medium-frequency AC/DC and DC/AC converters
- Induction heating systems
- High-efficiency power supply units
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified partners. Confirm RoHS3 compliance status prior to integration. Ensure storage conditions align with manufacturer guidelines to maintain junction integrity. Cross-reference datasheet revisions for any updates to electrical limits or packaging specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high current density in compact surface-mount layouts. Evaluate thermal resistance requirements against the 1kW dissipation limit. Consider the 1.7V Vce(sat) for efficiency calculations in high-load scenarios. Ensure gate drive circuits support the specified voltage ranges and leakage currents for reliable operation.
Part Context
This part belongs to the MMIX1 series of single IGBTs from IXYS, specifically engineered for medium-speed applications. It complements other high-power devices in the portfolio by offering a balance between conduction losses and switching speed in a standardized SMPD footprint.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official IXYS cross-reference guides for potential alternatives.
