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Product Detailed Parameters
- Description：IGBT 600V 175A 24-SMPD
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：175 A
- Current - Collector Pulsed (Icm)：1000 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 100A
- Power - Max：520 W
- Switching Energy：2.85mJ (on), 2.9mJ (off)
- Input Type：Standard
- Gate Charge：315 nC
- Td (on/off) @ 25°C：48ns/160ns
- Test Condition：360V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：24-PowerSMD, 21 Leads
- Supplier Device Package：24-SMPD
- Grade：-
- Qualification：-
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Overview
The MMIX1X200N60B3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and is housed in an SMPD-21 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 175 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 520 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-power switching applications with optimized low saturation voltage characteristics.
- Utilizes Surface Mount Device Package (SMDP) configuration for automated assembly integration.
- Engineered for medium-frequency operation suitable for industrial power conversion systems.
Applications
- Industrial motor drives and control systems
- Uninterruptible Power Supplies (UPS)
- High-efficiency DC-AC inverters
Procurement Notes
Verify the specific suffix B3H1 against the manufacturer's latest datasheet to confirm compliance with current environmental directives such as RoHS and REACH. Ensure that the SMPD-21 footprint matches the target PCB design constraints before finalizing procurement orders.
Selection Notes
Select this component when a single IGBT with 600 V blocking capability and approximately 175 A continuous current is required in a compact surface-mount form factor. Compare the 1.7 V saturation voltage against alternative packages to evaluate thermal management requirements for the specific application load profile.
Part Context
This part belongs to the MMIX1X200N60 series of Extreme Light Punch Through IGBTs from IXYS. These devices are specifically engineered for switching frequencies between 10 kHz and 30 kHz, offering a balance of low conduction losses and manageable switching speeds for modern power electronics designs.
Replacement Considerations
Consult official substitution guides for equivalent SMPD-21 packaged IGBTs with matching 600 V and 175 A ratings. Verify pinout compatibility and thermal resistance values before replacing the original component.
