MMIX1Y100N120C3H1

$40.72

Description：IGBT 1200V 92A 24-SMPD
Series：GenX3™, XPT™

SKU:e4b67e54d319 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 92A 24-SMPD
Series：GenX3™, XPT™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：92 A
Current - Collector Pulsed (Icm)：440 A
Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 100A
Power - Max：400 W
Switching Energy：6.5mJ (on), 2.9mJ (off)
Input Type：Standard
Gate Charge：270 nC
Td (on/off) @ 25°C：48ns/123ns
Test Condition：600V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)：420 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：24-PowerSMD, 21 Leads
Supplier Device Package：24-SMPD
Grade：-
Qualification：-

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MMIX1Y100N120C3H1

Overview

The MMIX1Y100N120C3H1 is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and is housed in an SMDP-21 surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 175 A at 25°C. Key electrical parameters include a saturation voltage of 1.7 V, a power dissipation rating of 520 W, and a gate-emitter leakage current of 200 nA. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Single-channel IGBT configuration for discrete power switching applications
SMDP-21 surface-mount package design for automated PCB assembly
Silicon-based semiconductor construction ensuring robust thermal performance

Applications

Industrial motor drives and variable frequency drives
Uninterruptible power supply (UPS) systems
High-frequency power conversion circuits

Procurement Notes

Verify the exact datasheet version and manufacturer specifications before procurement. Confirm that the SMDP-21 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 520 W power dissipation limit under your specific operating conditions.

Selection Notes

Select this component when a surface-mount IGBT with 600V blocking capability and high current handling is required. The SMDP-21 package facilitates automated manufacturing processes. Consider the 1.7 V saturation voltage for efficiency optimization in low-voltage, high-current applications compared to through-hole alternatives.

Part Context

This part belongs to IXYS's lineup of silicon IGBTs designed for medium-power applications. It represents a transition from traditional through-hole packages to surface-mount technologies, allowing for more compact circuit board designs while maintaining reliable power switching capabilities in industrial environments.