MMJX1H40N150

MMJX1H40N150

$33.71
  • Description:SCR 1.5KV 40A SMPD
  • Series:-

SKU:832be174af3c Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:SCR 1.5KV 40A SMPD
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Voltage - Off State:1.5 kV
  • Voltage - Gate Trigger (Vgt) (Max):-
  • Current - Gate Trigger (Igt) (Max):-
  • Current - Hold (Ih) (Max):-
  • Current - Non Rep. Surge 50, 60Hz (Itsm):-
  • SCR Type:Standard Recovery
  • Operating Temperature:-55°C ~ 150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:16-BESOP (0.787", 20.00mm Width), 15 Leads, Isolated Tab
  • Supplier Device Package:-
  • Voltage - On State (Vtm) (Max):-
  • Current - On State (It (AV)) (Max):-
  • Current - On State (It (RMS)) (Max):-
  • Current - Off State (Max):-

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MMJX1H40N150

Overview

The MMJX1H40N150 is a high-voltage MOS Gated Thyristor manufactured by IXYS Corporation. It features a 1500V blocking voltage capability, designed for demanding power electronics applications. The device integrates MOS gate control with thyristor characteristics to achieve low conduction losses at high voltages. This component is suitable for use in high-frequency switching circuits where efficient power handling and robust voltage tolerance are required.

Feature Summary

  • Combines MOS gate drive simplicity with thyristor low-conduction loss performance
  • Engineered for high-voltage operation up to 1500V
  • Optimized for high-frequency switching applications

Applications

  • High-voltage DC-DC converters
  • Induction heating systems
  • Resonant converter topologies

Part Context

This component belongs to the MMJX series of MOS Gated Thyristors from IXYS. These devices bridge the gap between traditional MOSFETs and IGBTs, offering specific advantages in high-voltage, high-frequency scenarios. The series is characterized by its ability to handle significant power levels while maintaining fast switching speeds.

MMJX1H40N150MMJX1H40N150
$33.71
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