MMPN080045

RF Diode Overview

The MMPN080045 is a distributed PIN diode integrated into a 50 Ω microstrip transmission line, designed for operation as a shunt reflective attenuator. It provides broadband performance across the 2 GHz to 20 GHz frequency range. Key electrical specifications include a maximum reverse current of 100 nA, a minimum breakdown voltage of 200 V, and a maximum insertion loss of 1 dB. The device achieves a minimum return loss of 12 dB and a minimum isolation of 30 dB under standard test conditions.

RF Diode Feature Summary

• High isolation capability suitable for demanding RF applications
• Broadband performance extending up to 50 GHz
• Integrated design within a 50 Ω microstrip transmission line

RF Diode Applications

• Shunt reflective attenuators
• RF signal processing circuits requiring high isolation
• Broadband microwave systems operating in the 2-20 GHz range

RF Diode Procurement Notes

Verify the specific package outline C50 against mechanical constraints before ordering. Confirm that the absolute maximum ratings, including reverse voltage and forward current limits, align with the system's operational requirements. Ensure proper mounting and bonding temperature protocols are followed during assembly to maintain device integrity.

RF Diode Selection Notes

Select the MMPN080045 when a 2-20 GHz bandwidth is required with moderate isolation levels. Compare its 30 dB minimum isolation against the MMPN080150 if higher isolation is needed at the cost of increased insertion loss. Consider the 200 V breakdown voltage for high-power handling capabilities within the specified thermal limits.

RF Diode Part Context

This component belongs to the MMPN080x series of distributed PIN diodes from MACOM Technology Solutions. The series includes variants like the MMPN080150, which offers extended frequency coverage up to 35 GHz but with different performance trade-offs. These devices are engineered for integration into microstrip lines for compact RF module designs.

RF Diode Replacement Considerations

The MMPN080150 serves as a direct alternative within the same series, offering broader frequency coverage up to 35 GHz. Designers should evaluate the trade-off between the higher isolation of the MMPN080150 and its increased insertion loss compared to the MMPN080045.

RF Diode FAQ

What is the maximum reverse voltage rating for the MMPN080045?

The absolute maximum reverse voltage rating for the MMPN080045 is 200 V.

What is the minimum isolation specification for this model?

The MMPN080045 guarantees a minimum isolation of 30 dB under standard test conditions.

How does the MMPN080045 differ from the MMPN080150?

The MMPN080045 operates from 2-20 GHz with 30 dB isolation, while the MMPN080150 covers 2-35 GHz with 50 dB isolation but has higher insertion loss.