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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI1230
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：450MHz
- Gain：20dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：150 mA
- Power - Output：1000W
- Voltage - Rated：120 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：NI-1230S-4
- Supplier Device Package：NI-1230S-4
- Configuration：-
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Overview
The MMRF1006HSR5 is an RF power MOSFET manufactured by NXP USA Inc. It operates within the 10 MHz to 500 MHz frequency range and delivers a continuous wave output power of 1000 W at a drain voltage of 50 V. The device utilizes Silicon technology and is housed in a reel package configuration.
Feature Summary
- Designed for high-power RF applications requiring robust performance across broad bandwidths
- Capable of delivering substantial continuous wave output power under standard operating voltages
- Constructed using silicon-based semiconductor technology for reliable operation
Applications
- Broadband radio frequency power amplification
- Industrial, scientific, and medical equipment driving
- High-power signal generation systems
Procurement Notes
Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm specific lot codes and manufacturing dates against current inventory records. Ensure handling procedures comply with electrostatic discharge protection standards during storage and installation. Review technical documentation for any updates regarding compliance or operational limits before integration into final designs.
Selection Notes
Evaluate thermal management requirements carefully given the high power dissipation characteristics inherent to this class of devices. Consider impedance matching network complexity required to achieve optimal efficiency across the specified wide frequency band. Assess system voltage stability needs to maintain consistent performance at the rated 50 V operating point without exceeding absolute maximum ratings.
Part Context
This component belongs to NXP's portfolio of RF power transistors engineered for demanding broadband applications. It represents a solution for scenarios requiring significant output power across multiple decades of frequency coverage. The device supports designs where wideband capability and high power density are critical performance drivers.
Replacement Considerations
Consult official NXP documentation for verified substitute part numbers. Cross-reference specifications strictly to ensure compatibility with existing circuit parameters and thermal constraints.
