MMRF1017NR3

Overview

The MMRF1017NR3 is an RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within a frequency range of 720 to 960 MHz and delivers 80 W average output power. The device requires a 28 V supply voltage and features a drain current of 1.4 A with a gain of 20 dB. It utilizes an FM2F plastic flange mount package measuring 9.96 mm x 20.57 mm x 3.81 mm. The component is rated for 65 V and supports wideband RF amplifier applications.

Feature Summary

• Designed for wideband RF power amplifiers covering the 720 to 960 MHz frequency range
• Utilizes LDMOS technology for high average output power capability
• Constructed in a plastic flange mount package for thermal management

Applications

• Wideband RF power amplifiers
• Broadband transmitter modules
• Base station power amplification

Procurement Notes

Verify the specific revision status of the datasheet, as the MMRF1017NR3 variant may be marked as No Longer Manufactured in some official records. Confirm that the required FM2F package matches the physical constraints of the target design. Ensure compliance with RoHS standards if lead-free composition is mandatory for the assembly process. Cross-reference the ordering suffix with the manufacturer's current portfolio to confirm availability or obsolescence status before finalizing procurement plans.

Selection Notes

Select this component when designing amplifiers requiring 80 W average power at frequencies up to 960 MHz. The 20 dB gain and 28 V operating voltage define the biasing requirements. Consider the FM2F flange mount package for mechanical stability and heat dissipation needs. Evaluate the 1.4 A drain current against the power supply capabilities of the system architecture to ensure stable operation under full load conditions.

Part Context

This part belongs to the NXP MMRF series of RF power LDMOS transistors. These components are engineered for robust performance in demanding radio frequency environments. The MMRF1017NR3 specifically targets broadband applications where consistent power delivery across a wide frequency span is critical. It represents a standard solution for mid-power RF amplification tasks in communication infrastructure.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. The MMRF1017N is listed as a related product, but specific substitution data is absent. Verify compatibility with existing circuit designs if considering alternative LDMOS devices from the same manufacturer family.