MMRF1312GSR5

Overview

The MMRF1312GSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for pulse applications operating at frequencies from 900 to 1215 MHz. It features a NI-1230GS-4L gull wing package and is qualified up to a maximum of 52 Vdc drain-source voltage. The device delivers peak output power ranging from 1200 W at 1215 MHz to 1615 W at 900 MHz under typical short pulse conditions (128 µsec, 10% duty cycle). Power gain typically ranges from 15.2 dB to 19.2 dB across the band, with drain efficiency between 53.8% and 58.5%.

Feature Summary

• High ruggedness capable of handling greater than 20:1 VSWR at all phase angles without degradation.
• Integrated electrostatic discharge protection featuring an extended negative voltage range to improve Class C operation and gate voltage pulsing.
• Internally matched input and output circuits to facilitate broadband operation and simplify integration into amplifier designs.

Applications

• Air traffic control systems including ground-based secondary radars such as IFF interrogators or transponders
• Distance measuring equipment (DME)
• Tactical air navigation (TACAN)

Procurement Notes

Verify the specific ordering suffix R5 confirms tape and reel packaging containing 50 units on a 56 mm wide, 13-inch reel. Confirm the GS suffix corresponds to the NI-1230GS-4L gull wing package configuration. Ensure compatibility with push-pull or quadrature circuit topologies requiring balanced configurations.

Selection Notes

Select this component for high-power military and commercial L-band radar applications requiring large duty cycles and long pulses. Evaluate thermal management requirements against the specified junction-to-case thermal impedance. Verify that system load mismatch conditions remain within the documented ruggedness limits to prevent device degradation.

Part Context

This part belongs to the MMRF1312 family of RF power LDMOS transistors manufactured by NXP Semiconductors. It shares core electrical characteristics with the MMRF1312H and MMRF1312HS variants, differing primarily in the mechanical package style and termination method suitable for specific mounting requirements.

Replacement Considerations

Direct replacements include MMRF1312H and MMRF1312HS. Note that these alternatives utilize different packages (NI-1230H-4S and NI-1230S-4S respectively) and require appropriate adapter or redesign considerations for physical mounting.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage rating is +112 Vdc.

How does the device perform under severe load mismatch?

The device exhibits high ruggedness and shows no degradation when subjected to greater than 20:1 VSWR at all phase angles with 3 dB overdrive.

Is the device internally matched?

Yes, the input and output are internally matched for broadband operation and ease of use.