MMRF1320GNR1

Overview

The MMRF1320GNR1 is an RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within a frequency range of 1.8 to 600 MHz and delivers 150W continuous wave output power at 50V. The device features 26.1dB gain and is housed in a TO-270 WB-4 gull-wing package. Designed for broadband operation, it includes internal input and output matching networks to simplify circuit integration.

Feature Summary

• Internally matched for broadband operation across 1.8–600 MHz
• High-power capability with 150W CW output at 50V
• Integrated input and output matching networks for ease of use

Applications

• Broadband RF power amplification
• Base station transmitter modules
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the complete part number including suffix 'GNR1' against official NXP documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the supplier provides original manufacturer traceability. Request the latest datasheet revision to validate electrical parameters and thermal characteristics before finalizing procurement orders.

Selection Notes

Select this component when high linear power output is required over a wide frequency band without external matching components. Ensure the application supports the 50V drain voltage requirement. Verify thermal management capabilities align with the device's power dissipation needs in the intended enclosure design.

Part Context

This device belongs to NXP's MMRF series of RF power LDMOS transistors designed for robust performance in demanding RF environments. It complements other broadband solutions in the portfolio, offering a balance of high efficiency and linearity for modern communication infrastructure.

Replacement Considerations

Consult NXP official substitution guides for direct replacements. No public confirmed substitute part numbers are available in the provided source material.