Single Bipolar Transistors MMSS8050W-J-TP product image

MMSS8050W-J-TP

  • Description:TRANS NPN 25V 1.5A SOT-323
  • Series:-

SKU:ce74ef88075c Category: Brand:

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MMSS8050W-J-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 25V 1.5A SOT-323. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MMSS8050W-J-TP

  • Description:TRANS NPN 25V 1.5A SOT-323
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 1V
  • Power - Max:200 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MMSS8050W-J-TP

MMSS8050W-J-TP

Single Bipolar Transistors Overview

The MMSS8050W-J-TP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components (MCC). It belongs to the MMSS8050W series and utilizes a SOT-323 surface-mount package. The device features a collector-emitter voltage of 25 V, a collector current rating of 1.5 A, and a power dissipation capacity of 200 mW. The 'J' suffix designates a DC current gain (hFE) classification range of 300 to 400 at specified test conditions. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Halogen-free green device construction with UL 94 V-0 flammability rating epoxy
  • RoHS compliant lead-free finish for environmental safety
  • Moisture sensitivity level 1 certification for reliable handling
  • High DC current gain classification optimized for signal amplification

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Electronic switching applications in low-power systems
  • Driver stages for consumer electronics

Single Bipolar Transistors Procurement Notes

Verify component authenticity strictly through authorized MCC distributors or direct procurement channels. Unverified sources may supply counterfeit parts lacking full traceability. Confirm RoHS compliance and specific hFE binning ('J' suffix) against official datasheets prior to integration into production lines.

Single Bipolar Transistors Selection Notes

Select this variant when high current gain is required for sensitive amplification tasks. Ensure the SOT-323 footprint aligns with PCB layout constraints. Verify thermal management capabilities given the 200 mW power dissipation limit and 625°C/W thermal resistance characteristics under ambient operating conditions.

Single Bipolar Transistors Part Context

This component is part of the MMSS8050W family, which includes variants distinguished by their DC current gain ranges. The 'L' suffix indicates a gain of 120-200, while 'H' denotes 200-350. The 'J' suffix specifically targets applications requiring higher amplification factors within the same physical and electrical envelope as other series members.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include MMSS8050W-H-TP and MMSS8050W-L-TP from the same manufacturer. Cross-manufacturer replacements must match the SOT-323 package, 25V VCEO rating, and 1.5A IC capability while verifying equivalent hFE performance.

Single Bipolar Transistors FAQ

What does the 'J' suffix indicate in the part number?

The 'J' suffix specifies the DC current gain (hFE) classification range, which is 300 to 400 for this specific device.

Is the MMSS8050W-J-TP RoHS compliant?

Yes, the 'P' suffix in the part number designates that the device is RoHS compliant and features a lead-free finish.

What is the maximum power dissipation for this transistor?

The maximum power dissipation (PD) is rated at 200 mW.

MMSS8050W-J-TPMMSS8050W-J-TP

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