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MMST2222A-7 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 40V 0.6A SOT-323. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for MMST2222A-7
- Description：TRANS NPN 40V 0.6A SOT-323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：200 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for MMST2222A-7
Single Bipolar Transistors Overview
The MMST2222A-7 is an NPN small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in a lead-free SOT-323 molded plastic package. Key electrical ratings include a collector-base voltage of 75 V, a collector-emitter voltage of 40 V, and a continuous collector current of 600 mA. The device supports a power dissipation of 200 mW with a thermal resistance of 625 °C/W. Operating and storage temperatures range from -55°C to +150°C.
Single Bipolar Transistors Feature Summary
- Epitaxial planar die construction for reliable performance
- Ultra-small surface mount package design
- Lead-free plating available
Single Bipolar Transistors Applications
- General-purpose switching applications
- Small signal amplification circuits
Single Bipolar Transistors Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details and material composition. Confirm that the required version matches the intended application constraints regarding lead-free specifications and tape-and-reel quantities. Cross-reference datasheet revisions to ensure compatibility with current manufacturing standards.
Single Bipolar Transistors Selection Notes
Select this component when a compact NPN transistor with a 40V collector-emitter rating and 600mA continuous current capability is required. Consider the SOT-323 package dimensions for space-constrained PCB layouts. Ensure the operating temperature range aligns with the system's environmental requirements.
Single Bipolar Transistors Part Context
This part belongs to the MMST series of small signal transistors produced by Diodes Incorporated. It serves as the NPN counterpart to the complementary PNP type, the MMST2907A. The device is designed for general-purpose electronic applications requiring efficient surface-mount integration.
Single Bipolar Transistors Replacement Considerations
MMST2222A-7-F (Lead-free variant)
Single Bipolar Transistors FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 40 V.
Is a lead-free version available?
Yes, a lead-free version is available by adding the '-F' suffix to the part number, resulting in MMST2222A-7-F.
What is the current gain-bandwidth product?
The current gain-bandwidth product (fT) is 300 MHz under specified test conditions.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
