MMVL3102T1G

Overview

The MMVL3102T1G is a small-signal NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. The device is housed in an SOT-23 surface-mount package, providing a compact form factor suitable for space-constrained designs. It operates within a temperature range of -55 °C to +150 °C and has a maximum power dissipation of 310 mW.

Feature Summary

• High-voltage capability with 50 V collector-emitter breakdown
• Compact SOT-23 surface-mount packaging
• Wide operating temperature range up to 150 °C

Applications

• General-purpose switching circuits
• Low-power amplifier stages
• Signal conditioning in consumer electronics

Procurement Notes

Verify the component authenticity through authorized onsemi distributors or certified suppliers. Confirm the part marking matches the official datasheet specifications. Ensure the supply chain documentation includes traceability records to prevent counterfeit components from entering the production line.

Selection Notes

Select this component when a 50 V NPN transistor is required in an SOT-23 package. Consider the 100 mA current limit and 310 mW power dissipation constraints during thermal design. Evaluate alternative packages if higher current handling or different mounting requirements are necessary.

Part Context

This part belongs to onsemi's general-purpose small-signal transistor portfolio. It serves as a standard discrete semiconductor solution for low-power applications. The SOT-23 variant offers a balance between performance and board space efficiency compared to larger through-hole packages.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.