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The MMVL809T1G is a single varactor diode manufactured by onsemi, designed for RF and microwave applications. It utilizes Silicon technology and is housed in an SOD-323 surface-mount package. The device features a maximum reverse working voltage of 20 V and a collector-emitter breakdown voltage of 80 V. Key electrical parameters include a maximum DC collector current of 500 mA, a power dissipation rating of 225 mW, and a gain-bandwidth product (fT) of 150 MHz. The component operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet version and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the SOD-323 package dimensions match the target PCB footprint requirements. Ensure storage conditions adhere to moisture sensitivity levels specified in the handling guidelines to maintain device integrity during soldering processes.
Select this component when a single varactor diode with a 20 V rating is required for RF applications. Consider the SOD-323 package size for space-constrained designs. Evaluate the 150 MHz gain-bandwidth product against circuit frequency needs. Compare thermal dissipation capabilities with system heat management strategies to ensure stable operation under load conditions.
This part belongs to the onsemi discrete semiconductor portfolio, specifically within the varactor diode category. It complements other RF components like switching diodes and standard rectifiers. The MMBT8099L series represents related bipolar transistor offerings from the same manufacturer, providing options for signal amplification in similar electronic systems.
Public confirmed substitute part numbers are not available in the provided documentation.