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The MNS2N3810U is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 metal can package designed for through-hole mounting. The device features a maximum DC collector current of 50 mA and a collector-emitter voltage rating of 60 V. Power dissipation is rated at 350 mW, with an operating temperature range spanning from -65 °C to +200 °C. The component exhibits a minimum DC current gain of 150 and a maximum of 450 under specified test conditions.
Verify the specific suffix designation against the manufacturer's official datasheet to confirm exact electrical tolerances and qualification standards. Ensure the procurement channel provides traceability documentation required for regulated industries. Confirm package integrity upon receipt as the TO-78-6 housing requires careful handling to maintain hermetic seal specifications during installation.
Select this component when a dual PNP configuration is required in a hermetic metal package. Verify that the 60 V collector-emitter voltage and 50 mA current ratings align with circuit requirements. Consider the TO-78-6 footprint for PCB layout compatibility. Evaluate the high-temperature capability if the application environment exceeds standard commercial limits.
This part belongs to the 2N3810 series of dual small-signal BJTs produced by Microchip Technology. The series includes variants such as the standard 2N3810 and the JANTX2N3810U, which share similar core electrical characteristics but differ in packaging and qualification levels. The MNS2N3810U represents a specific military or space-grade variant within this established product family.
Direct substitutes include the 2N3810 and JANTX2N3810U. Verify pinout compatibility and hermetic sealing requirements before substitution. Alternative packages may require adapter solutions or redesign.