MP6K31TR

FET, MOSFET Arrays Overview

The MP6K31 is a dual N-channel silicon MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a 4V gate-source drive capability and includes built-in G-S protection diodes. The device is housed in an MPT6 surface-mount package with six terminals. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of ±2 A, and a pulsed drain current of ±8 A. The static drain-source on-state resistance ranges from 210 mΩ to 350 mΩ depending on the gate voltage. Total power dissipation is rated at 2.0 W, with a maximum channel temperature of 150 °C.

FET, MOSFET Arrays Feature Summary

• Built-in Gate-Source protection diodes for enhanced circuit reliability.
• Optimized for low voltage drive operations at 4V.
• Compact MPT6 surface mount package design.

FET, MOSFET Arrays Applications

• General-purpose switching circuits
• Low voltage drive logic interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before procurement. Ensure the component meets the required automotive or industrial standards if applicable to your specific system design.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel MOSFETs with low gate drive voltages. Consider the 60 V breakdown voltage and 2 A continuous current limits when designing the load circuit. Verify that the thermal management strategy accommodates the 2.0 W total power dissipation rating under expected operating conditions.

FET, MOSFET Arrays Part Context

The MP6K31 belongs to ROHM's lineup of small-signal dual MOSFETs intended for general electronic equipment. It serves as a compact solution for switching applications where space is limited and low voltage operation is preferred. The MPT6 package allows for efficient surface mounting on printed circuit boards.

FET, MOSFET Arrays Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with pinout, voltage ratings, and package dimensions.

FET, MOSFET Arrays FAQ

What is the function of the built-in G-S protection diode?

The built-in Gate-Source protection diode safeguards the gate terminal from electrostatic discharge and voltage spikes, enhancing the reliability of the MOSFET in sensitive circuits.

What is the maximum pulsed drain current for the MP6K31?

The maximum pulsed drain current (IDP) is specified as ±8 A, provided the pulse width is less than or equal to 10 µs and the duty cycle does not exceed 1%.

How is the MP6K31 packaged?

The MP6K31 is available in the MPT6 surface-mount package, which is a compact form factor suitable for automated assembly and space-constrained designs.