MP6M14TCR

FET, MOSFET Arrays Overview

The MP6M14 is a complementary silicon MOSFET module integrating an N-channel and a P-channel transistor within a single MPT6 package. The N-channel device supports a drain-source voltage of 30V with a continuous drain current of 8.0A, while the P-channel counterpart provides -30V breakdown and -6.0A continuous current. Both transistors are engineered for low-voltage drive applications at 4V. Key electrical parameters include a typical total gate charge of 7.3nC for the N-channel and 10.4nC for the P-channel. The component operates across a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Complementary N-channel and P-channel configuration in a compact surface-mount package
• Optimized for low-voltage drive circuits operating at 4V
• Low on-resistance characteristics for efficient power switching

FET, MOSFET Arrays Applications

• General-purpose electronic switching circuits
• Motor driver interfaces
• Power management modules requiring complementary logic-level control

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'TCR' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure that the basic ordering unit quantity aligns with project requirements before finalizing procurement orders. Cross-reference the RoHS compliance status directly with the latest datasheet revision to maintain regulatory adherence.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N-P pair is required for bridge or half-bridge topologies. Evaluate the thermal resistance and safe operating area curves to ensure adequate heat dissipation under pulsed load conditions. Confirm that the 4V drive voltage requirement matches the system logic levels to guarantee optimal RDS(on) performance.

FET, MOSFET Arrays Part Context

This dual MOSFET belongs to ROHM's complementary switch series designed for space-constrained applications. It consolidates two discrete transistors into one footprint to reduce board area and parasitic inductance. The MPT6 package facilitates automated surface-mount assembly while maintaining robust electrical isolation between the N-channel and P-channel elements.

FET, MOSFET Arrays Replacement Considerations

Direct replacement requires verifying pin compatibility and electrical ratings. Check if alternative packages like SOT-363 offer equivalent performance. Ensure any substitute maintains the 4V drive capability and similar gate charge values to preserve switching speed.

FET, MOSFET Arrays FAQ

What is the maximum continuous source current for the body diode?

The absolute maximum rating specifies a continuous source current (Is) of 1.6A for the N-channel and -1.6A for the P-channel.

How does the gate threshold voltage vary between the N-channel and P-channel?

The N-channel gate threshold voltage ranges from 1.0V to 2.5V, whereas the P-channel threshold voltage ranges from -1.0V to -2.5V.

What is the typical input capacitance for the N-channel transistor?

The typical input capacitance (Ciss) for the N-channel is 470pF, measured at VDS=10V.