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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 100V 10A TO-220
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：850 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 µA @ 100 V
- Operating Temperature - Junction：-40°C ~ 150°C
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The MPE-220A-L is a silicon Schottky barrier diode designed for high-frequency rectification applications. It features a resin-molded structure with a peak reverse voltage rating of 100 V and an average forward current capacity of 20 A. The device exhibits a maximum forward voltage drop of 0.85 V at 10 A and supports a peak surge forward current of 120 A. Operating junction temperatures range from -40 °C to +150 °C, with a thermal resistance between junction and case of 2.5 °C/W.
Feature Summary
- Schottky barrier construction enables low forward voltage drop for reduced power dissipation
- Resin molded package provides structural integrity and UL94V-0 flammability rating
- High surge current capability ensures robustness during transient phases
Applications
- High frequency rectification circuits
- Switched mode power supplies
- DC to DC converters
Procurement Notes
Verify the specific suffix designation when ordering, as the datasheet specifies the MPE-220A-L variant. Confirm that the required electrical ratings align with the absolute maximum limits defined in the official specifications. Ensure compatibility with the specified thermal management requirements given the junction-to-case thermal resistance value.
Selection Notes
Select this component for applications requiring efficient high-frequency rectification where low forward voltage drop is critical for minimizing heat generation. Consider the 20 A average forward current limit and the necessity of derating based on case temperature to maintain safe operating junction temperatures within the specified range.
Part Context
This silicon Schottky barrier diode belongs to Sanken Electric's discrete semiconductor portfolio. It utilizes a standard resin-molded package suitable for through-hole mounting. The device is engineered to provide reliable performance in power conversion systems, leveraging the fast switching characteristics inherent to Schottky technology.
Replacement Considerations
Consult official cross-reference documentation for verified substitute part numbers. Ensure any replacement maintains equivalent peak reverse voltage, average forward current, and thermal resistance specifications to guarantee circuit compatibility.
FAQ
What is the maximum allowable junction temperature for the MPE-220A-L?
The maximum operating junction temperature is +150 °C.
How does the forward voltage drop vary with current?
The maximum forward voltage drop is rated at 0.85 V when conducting an average forward current of 10 A.
Is the device suitable for high-temperature environments?
Yes, the device is rated for operation up to a junction temperature of +150 °C and includes specifications for reverse leakage current under high-temperature conditions.
