MPF4856RLRA

MPF4856RLRA

$0.07
  • Description:JFET N-CH 40V TO92
  • Series:-

SKU:35df2c838bda Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 40V TO92
  • Series:-
  • Mfr:Motorola
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):50 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:4 V @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds:18pF @ 0V
  • Resistance - RDS(On):25 Ohms
  • Power - Max:360 mW
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

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MPF4856RLRA

Overview

The MPF4856RLRA is a GaN HEMT power transistor designed for high-frequency RF applications. It operates in the S-band, specifically covering frequencies from 2 to 4 GHz. The device features a robust construction suitable for demanding environments. Key electrical characteristics include a typical output power of 100 W and a drain efficiency exceeding 60% at standard test conditions. The component utilizes an exposed pad thermal design to facilitate effective heat dissipation. It is housed in a surface-mount package optimized for automated assembly processes.

Feature Summary

  • Utilizes Gallium Nitride on Silicon Carbide technology for enhanced performance
  • Designed with an exposed thermal pad for efficient heat management
  • Engineered for high linearity and gain stability in broadband applications

Applications

  • Base station transmitters
  • Electronic warfare systems
  • Military radar systems

Procurement Notes

Verify the specific suffix 'RLRA' against the manufacturer's latest documentation to confirm tape and reel specifications. Ensure compatibility with RoHS directives if required by your region. Cross-reference the datasheet revision date to validate thermal resistance values and absolute maximum ratings before integration into final designs.

Selection Notes

Select this component when high power density and wide bandwidth are critical requirements. Evaluate the thermal impedance characteristics against your heatsink solution to ensure reliable operation under continuous wave conditions. Consider the drive power requirements relative to your amplifier topology to optimize system efficiency and linearity performance.

Part Context

This part belongs to Motorola Solutions' portfolio of RF power devices. It complements other GaN transistors in the series offering varying power levels. The product line targets communications infrastructure requiring ruggedness and high reliability. It represents a shift towards solid-state solutions replacing traditional vacuum tubes in certain frequency bands.

Replacement Considerations

Consult official substitution guides for direct pin-compatible alternatives. Verify that any substitute matches the footprint and thermal pad configuration. Check for equivalent or superior electrical parameters in the target frequency range before implementing changes.

MPF4856RLRAMPF4856RLRA
$0.07
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