MPN7380-T83

RF Diode Overview

The MPN7380-T83 is a high-power silicon PIN diode chip manufactured by MACOM Technology Solutions. It features a fully passivated mesa construction with tri-metallization for reliable operation under demanding conditions. The device offers a breakdown voltage of 800 V at 10 µA reverse current, a maximum series resistance of 0.60 Ω at 100 mA forward current, and a junction capacitance of 2500 pF at 50 V reverse bias. It has a nominal minority carrier lifetime of 7 ns and a Theta I-region width of 80 °C/W. The contact diameter is 24 mils, and the chip size is 37 mils square.

RF Diode Feature Summary

• Passivated mesa construction with tri-metallization
• High power handling capability
• Screening available per MIL-PRF-19500 / 38534

RF Diode Applications

• High-power switching applications
• Broadband RF circuits
• Wireless infrastructure components

RF Diode Procurement Notes

Verify the specific T83 suffix requirements against the manufacturer's official documentation to ensure correct packaging or die specifications. Confirm that the component meets all necessary environmental and reliability standards for the intended deployment environment before finalizing procurement orders.

RF Diode Selection Notes

Select this component when an 800 V breakdown voltage and low series resistance are required for high-power silicon PIN diode applications. Ensure the design accommodates the specified junction capacitance and thermal characteristics for optimal performance in broadband switching scenarios.

RF Diode Part Context

This part belongs to MACOM's High Power Silicon PIN Diodes family, which includes variants like MPN7330, MPN7360, and MPN7370. These devices are designed for versatile, low-cost, ultra-small shunt PIN diode elements suitable for land mobile radio and test instrument applications.

RF Diode Replacement Considerations

MPN7360, MPN7370, MPN7420