Single Bipolar Transistors MPS2222RLRA product image

MPS2222RLRA

$0.04
  • Description:TRANS NPN 30V 0.6A TO92
  • Series:-

SKU:2d6deb60fc50 Category: Brand:

  
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MPS2222RLRA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.6A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MPS2222RLRA

  • Description:TRANS NPN 30V 0.6A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MPS2222RLRA

MPS2222RLRA

Single Bipolar Transistors Overview

The MPS2222RLRA is an NPN silicon planar epitaxial general-purpose transistor manufactured by onsemi. It features a TO-92 (Case 29-11) package with three leads configured as emitter, base, and collector. The device supports a continuous collector current of 600 mA and operates within a junction temperature range of -55°C to +150°C. Key electrical ratings include a collector-emitter voltage of 30 Vdc, a collector-base voltage of 60 Vdc, and an emitter-base voltage of 5.0 Vdc. Thermal resistance from junction to ambient is 200 °C/W.

Single Bipolar Transistors Feature Summary

  • NPN silicon planar epitaxial construction for general-purpose switching and amplification
  • Integrated thermal protection capabilities via defined junction-to-case resistance
  • Lead-free packaging option available compliant with environmental standards

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-power amplification stages
  • Driver applications requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix RLRA confirms tape and reel packaging containing 2000 units per reel. Confirm Pb-Free status if required by assembly specifications. Ensure the component matches the Case 29-11 physical dimensions and pinout configuration before integration into the design.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a standard NPN small-signal transistor with a 30V collector-emitter rating. Consider the MPS2222A variant if a higher 40V collector-emitter breakdown voltage is necessary for the application. Evaluate thermal dissipation requirements against the specified junction-to-ambient resistance limits.

Single Bipolar Transistors Part Context

This part belongs to the MPS2222 series of NPN silicon transistors produced by onsemi. The series includes variants such as MPS2222A with enhanced voltage ratings and different packaging options including bulk and reel configurations. The MPS2222RLRA specifically denotes the tape and reel packaging format for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

MPS2222A offers a higher collector-emitter voltage rating of 40V compared to the 30V of the MPS2222. Other compatible general-purpose NPN transistors may require verification of pinout compatibility and electrical parameter alignment.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the MPS2222?

The maximum collector-emitter voltage (VCEO) for the MPS2222 is 30 Vdc.

Does the MPS2222RLRA come in a lead-free package?

Yes, the MPS2222RLRAG designation indicates a lead-free package version of this component.

What is the DC current gain range at low collector currents?

At IC = 0.1 mAdc and VCE = 10 Vdc, the minimum DC current gain (hFE) is 35.

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