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MPS2R10-606 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SI PIN NON HERMETIC MMSM. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MPS2R10-606
- Description：SI PIN NON HERMETIC MMSM
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Diode Type：PIN - 1 Pair Common Anode
- Voltage - Peak Reverse (Max)：150V
- Current - Max：200 mA
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-65°C ~ 125°C
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MPS2R10-606
RF Diode Overview
The MPS2R10-606 is a series-shunt PIN diode SPDT switch designed for RF applications between 50 MHz and 1 GHz. It handles up to 100 W of continuous wave (CW) power with low insertion loss and high isolation. The device achieves switching speeds of 500 ns using simple analog control voltage. It is available in a non-hermetic MMSM package, suitable for robust signal routing in high-power environments.
RF Diode Feature Summary
- Series-shunt PIN diode configuration for SPDT switching
- High power handling capability up to 100 W CW
- Fast switching speed of 500 ns via analog control
- Low insertion loss and high isolation characteristics
RF Diode Applications
- RF signal routing in communication systems
- Antenna switching networks
- Test and measurement equipment
- High-power RF front-end modules
RF Diode Procurement Notes
Verify the specific datasheet version and manufacturer documentation to confirm electrical parameters such as insertion loss and isolation levels. Ensure the non-hermetic MMSM package type aligns with your environmental requirements. Cross-reference the part number with official Microchip Technology resources to validate availability and technical specifications before integration.
RF Diode Selection Notes
Select this component for applications requiring high power handling and fast switching within the 50 MHz to 1 GHz range. Consider the series-shunt topology for effective signal isolation. Evaluate the analog control voltage requirements against your system's drive capabilities. Confirm that the non-hermetic package meets the operational environment standards.
RF Diode Part Context
This part belongs to Microchip Technology's PIN diode switch portfolio, specifically designed for RF signal management. It utilizes silicon PIN diode technology to provide reliable switching performance. The MPS2R10-606 is engineered for durability and efficiency in high-frequency applications, supporting complex RF architectures.
RF Diode Replacement Considerations
Consult official Microchip Technology substitution guides for verified alternative part numbers. Ensure any replacement matches the series-shunt SPDT configuration and 100 W power rating. Verify compatibility with existing control voltage schemes and frequency range requirements.
RF Diode FAQ
What is the switching mechanism of the MPS2R10-606?
It uses a series-shunt PIN diode configuration controlled by an analog voltage to achieve 500 ns switching speeds.
Is the MPS2R10-606 hermetically sealed?
No, it is available in a non-hermetic MMSM package.
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