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Product Detailed Parameters
- Description：RF TRANS NPN 12V 2GHZ TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：2GHz
- Noise Figure (dB Typ @ f)：5dB @ 200MHz
- Gain：15dB
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 3mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The MPS5179_D26Z is an NPN silicon RF small signal transistor designed for low noise UHF/VHF amplifiers and high output UHF oscillators. It operates in common emitter or common base modes with collector currents ranging from 100 µA to 30 mA. Key electrical parameters include a collector-emitter voltage of 12 V, a collector-base breakdown voltage of 20 V, and a continuous collector current rating of 50 mA. The device exhibits a current gain-bandwidth product (fT) between 900 MHz and 2000 MHz at 5.0 mA. Additional specifications feature a minimum DC current gain (hFE) of 25, a maximum collector-base capacitance of 1.0 pF, and a typical amplifier power gain of 15 dB at 200 MHz.
Feature Summary
- Engineered for low noise performance in UHF and VHF frequency bands
- Capable of operation in both common emitter and common base configurations
- Optimized for use in low frequency drift, high output UHF oscillators
Applications
- Low noise UHF/VHF amplifiers
- High output UHF oscillators
- RF signal processing circuits
Procurement Notes
Verify the specific ordering suffix D26Z against manufacturer documentation to confirm tape and reel packaging details. Ensure the component matches the required TO-92 package configuration and lead orientation specified in the official datasheet before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring NPN transistors with high fT characteristics for frequencies up to 2 GHz. Consider the 12 V collector-emitter voltage limit and 50 mA continuous current rating during thermal and load analysis. Verify that the 1.0 pF collector-base capacitance meets the impedance matching requirements for the target application bandwidth.
Part Context
This part belongs to the MPS5179 family of NPN RF transistors manufactured by onsemi. It shares functional similarities with related devices such as the MMBT5179 and PN5179, which utilize comparable silicon planar processes for high-frequency applications. The D26Z suffix specifically denotes the tape and reel packaging format for automated assembly.
Replacement Considerations
Compatible substitutes include the MMBT5179 and PN5179. Verify pinout compatibility and ensure the replacement device meets the same 12 V VCEO and 900 MHz minimum fT specifications.
FAQ
What is the maximum operating junction temperature for the MPS5179?
The maximum operating and storage junction temperature range is -55°C to +150°C.
How does the MPS5179 perform in terms of noise figure?
At a collector current of 1.5 mA and VCE of 6.0 V with a 50Ω source resistance at 200 MHz, the noise figure is typically 5.0 dB.
What is the collector-base time constant specification?
The collector-base time constant (rb'Cc) ranges from 3.0 ps to 14 ps under test conditions of IC = 2.0 mA and f = 31.9 MHz.
